Samsung Unveils SSD Based on 3D V-NAND

By Nathan Eddy

Consumer electronics giant Samsung announced its first solid state drive (SSD) based on the company’s 3D V-NAND technology and designed for use in enterprise servers and data centers, during a keynote speech at the Flash Memory Summit 2013. Samsung said it began producing its new V-NAND SSDs earlier this month.

The company’s proprietary 3D V-NAND technology provides manufacturing productivity improvements over twice that of 20nm-class planar NAND flash, by employing cylinder-shaped 3D Charge Trap Flash (CTF) cell structures and vertical interconnect process technology to link the 24 layers comprising the 3D cell array.

During his keynote remarks, executive vice president of Samsung’s semiconductor research and development division E.S. Jung claimed that the 3D V-NAND would drive disruptive innovation that can be compared to a "digital big bang" in the global IT industry, and contribute to much more significant growth in the memory market. - See more at eWeek.

This article was originally published on August 15, 2013