Samsung has begun manufacturing 3.2 TB non-volatile memory express (NVMe) SSDs for high-end enterprise servers, the Korean electronics giant announced today.
The company’s SM1715 line of solid state drives (SSDs) pack 3.2 TB of storage capacity into a half-height, half-length PCIe card. Samsung became the first flash storage provider to ship an NVMe PCIe SSD in March, a 1.6 TB model featured in Dell’s PowerEdge R920 server.
According to the NVM Express working group, the low-latency specification “provides an optimized command issue and completion path” and can handle parallel operations “by supporting up to 64K commands within a single I/O queue to the device.” NVMe also includes support for end-to-end data protection, encryption, virtualization and other enterprise-grade data management and security features.
NVMe supporters include the technology’s originator Intel, along with a long list of IT industry heavyweights. Notable NVM Express members include EMC, Cisco, Dell, NetApp, HGST, Microsoft, and of course, Seagate.
The SM1715 also leverages Samsung’s proprietary 3D V-NAND (vertical NAND) technology, which as its name suggests, stacks flash cell layers to prevent cell-to-cell interference problems that crop up as flash chips shrink. This architecture enables V-NAND-based SSDs to offer 100 times the storage capacity in a tenth of the area occupied by traditional NAND chips at half the power consumption.
Samsung is relying on the breakthrough to make gains in the growing market for enterprise flash storage solutions.
Jeeho Baek, vice president of memory marketing for Samsung Electronics, said in a statement that the company “expects to greatly expand the high-density SSD market” with the start of mass production. “Samsung plans to aggressively introduce V-NAND-based SSDs with even higher performance, density and reliability in the future, to keep its global customers ahead of their competition.”
The 3.2 TB version of the SM1715, which is also available with 1.6 TB of capacity, boasts sequential read and write speeds of 3,000 MB per second and 2,200 MB per second, respectively. Random read and writes are rated at up to 750,000 IOPS (input output operations per second) and 130,000 IOPS, respectively.
Enhanced reliability is another hallmark of the company’s new process technology. Samsung estimates that V-NAND SSDs offer ten times the endurance of typical NAND-based units. For the 3.2TB SM1715, that translates into an SSD that can sustain 10 full drive wipes per day for five years.